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集成电路中的现代半导体器件(影印版)
  • 电子书不支持下载，仅供在线阅读
  • 书号：9787030326652
    作者：Chenming Calvin Hu
  • 外文书名：
  • 装帧：
    开本：B5
  • 页数：364
    字数：450
    语种：
  • 出版社：科学出版社
    出版时间：2012/3/5
  • 所属分类：
  • 定价： ￥88.00元
    售价： ￥52.80元
  • 图书介质:
    电子书

  • 购买数量： 件  可供
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本书主要介绍与集成电路相关的主流半导体器件的基本原理，包括PN结二极管、MOSFET器件和双极型晶体管（BJT），同时介绍了与这些半导体器件相关的集成工艺制造技术。本书作者是美国工程院院士、中国科学院外籍院士，多年从事半导体器件与集成电路领域的前沿性研究工作。本书内容简明扼要，重点突出，深度掌握适宜，讲解深入浅出，理论联系实际。本书可作为微电子及相关专业本科生教材，也可以作为微电子及相关领域工程技术人员的参考书。
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目录

  • Preface
    1 Electrons and Holes in Semiconductors
    1.1 Silicon Crystal Structure
    1.2 Bond Model of Electrons and Holes
    1.3 Energy Band Model
    1.4 Semiconductors,Insulators,and Conductors
    1.5 Electrons and Holes
    1.6 Density of States
    1.7 Thermal Equilibrium and the Fermi Function
    1.8 Electron and Hole Concentrations
    1.9 General Theory ofnandp
    1.10 Carrier Concentrations at Extremely High and Low Temperatures
    1.11 Chapter Summary
    PROBLEMS
    REFERENCES
    GENERAL REFERENCES
    2 Motion and Recombination of Electrons and Holes
    2.1 Thermal Motion
    2.2 Drift
    2.3 Diffusion Current
    2.4 Relation Between the Energy Diagram and V,&
    2.5 Einstein Relationship Between D and μ
    2.6 Electron-Hole Recombination
    2.7 Thermal Generation
    2.8 Quasi-Equilibrium and Quasi-Fermi Levels
    2.9 Chapter Summary
    PROBLEMS
    REFERENCES
    GENERAL REFERENCES
    3 Device Fabrication Technology
    3.1 Introduction to Device Fabrication
    3.2 Oxidation of Silicon
    3.3 Lithography
    3.4 Pattern Transfer„Etching
    3.5 Doping
    3.6 Dopant Diffusion
    3.7 Thin-Film Deposition
    3.8 Interconnect„The Back-End Process
    3.9 Testing,Assembly,and Qualification
    3.10 Chapter Summary„A Device Fabrication Example
    PROBLEMS
    REFERENCES
    GENERAL REFERENCES
    4 PN and Metal-Semiconductor Junctions
    Part I:PN Junction
    4.1 Building Blocks of the PN Junction Theory
    4.2 Depletion-Layer Model
    4.3 Reverse-Biased PN Junction
    4.4 Capacitance-Voltage Characteristics
    4.5 Junction Breakdown
    4.6 Carrier Injection Under Forward Bias„Quasi-Equilibrium Boundary Condition
    4.7 Current Continuity Equation
    4.8 Excess Carriers in Forward-Biased PN Junction
    4.9 PN Diode IV Characteristics
    4.10 Charge Storage
    4.11 Small-Signal Model of the Diode
    Part II:Application to Optoelectronic Devices
    4.12 Solar Cells
    4.13 Light-Emitting Diodes and Solid-State Lighting
    4.14 Diode Lasers
    4.15 Photodiodes
    Part III:Metal-Semiconductor Junction
    4.16 Schottky Barriers
    4.17 Thermionic Emission Theory
    4.18 Schottky Diodes
    4.19 Applications of Schottky Diodes
    4.20 Quantum Mechanical Tunneling
    4.21 Ohmic Contacts
    4.22 Chapter Summary
    PROBLEMS
    REFERENCES
    GENERAL REFERENCES
    5 MOS Capacitor
    5.1 Flat-Band Condition and Flat-Band Voltage
    5.2 Surface Accumulation
    5.3 Surface Depletion
    5.4 Threshold Condition and Threshold Voltage
    5.5 Strong Inversion Beyond Threshold
    5.6 MOS C-V Characteristics
    5.7 Oxide Charge„A Modification to V_fb and V_t
    5.8 Poly-Si Gate Depletion„Effective increase in T_ox
    5.9 Inversion and Accumulation Charge-Layer Thicknesses and Quantum Mechanical Effect
    5.10 CCD Imager and CMOS Imager
    5.11 Chapter Summary
    PROBLEMS
    REFERENCES
    GENERAL REFERENCES
    6 MOS Transistor
    6.1 Introduction to the MOSFET
    6.2 Complementary MOS(CMOS)Technology
    6.3 Surface Mobilities and High-Mobility FETs
    6.4 MOSFET Vt,Body Effect,and Steep Retrograde Doping
    6.5 QINV in MOSFET
    6.6 Basic MOSFET IV Model
    6.7 CMOS Inverter„A Circuit Example
    6.8 Velocity Saturation
    6.9 MOSFET IV Model with Velocity Saturation
    6.10 Parasitic Source-Drain Resistance
    6.11 Extraction of the Series Resistance and the Effective Channel Length
    6.12 Velocity Overshoot and Source Velocity Limit
    6.13 Output Conductance
    6.14 High-Frequency Performance
    6.15 MOSFET Noises
    6.16 SRAM,DRAM,Nonvolatile(Flash)Memory Devices
    6.17 Chapter Summary
    PROBLEMS
    REFERENCES
    GENERAL REFERENCES
    7 MOSFETs in ICs„Scaling,Leakage,and Other Topics
    7.1 Technology Scaling„For Cost,Speed,and Power Consumption
    7.2 Subthreshold Current„'Off' Is Not Totally 'Off'
    7.3 V_t Roll-Off„Short-Channel MOSFETs Leak More
    7.4 Reducing Gate-Insulator Electrical Thickness and Tunneling Leakage
    7.5 How to Reduce W_dep
    7.6 Shallow Junction and Metal Source/Drain MOSFET
    7.7 Trade-Off Between/_on and/_off and Design for Manufacturing
    7.8 Ultra-Thin-Body SOI and Multigate MOSFETs
    7.9 Output Conductance
    7.10 Device and Process Simulation
    7.11 MOSFET Compact Model for Circuit Simulation
    7.12 Chapter Summary
    PROBLEMS
    REFERENCES
    GENERAL REFERENCES
    8 Bipolar Transistor
    8.1 Introduction to the BJT
    8.2 Collector Current
    8.3 Base Current
    8.4 Current Gain
    8.5 Base-Width Modulation by Collector Voltage
    8.6 Ebers-Moll Model
    8.7 Transit Time and Charge Storage
    8.8 Small-Signal Model
    8.9 Cutoff Frequency
    8.10 Charge Control Model
    8.11 Model for Large-Signal Circuit Simulation
    8.12 Chapter Summary
    PROBLEMS
    REFERENCES
    GENERAL REFERENCES
    Appendix I Derivation of the Density of States
    Appendix II Derivation of the Fermi-Dirac Distribution Function
    Appendix III Self-Consistencies of Minority Carrier Assumptions
    Answers to Selected Problems
    Index
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