序 我国新型硅材料的开拓者 记中国科学院半导体研究所研究员梁骏吾 学术论文 Investigation of Heterostructure Defects for LPE Ga_1-xAl_xAs/GaAs Investigation of N-doped FZ Si Crystals The Interaction Between Impurities and Defects in Semiconductors Behaviors of Dislocations During Sl’s Growth and Crystal Quality Assessment Thermodynamic and Fluid Dynamic Analyses of GaAs Movpe Process Photoluminescence Spectrum Study of the GaAs/Si Epilayer Grown by using a Thin Amorphous Si Film as Buffer Layer Dissociated Screw Dislocation Which Can Relieve Strain Energy in the Epitaxial Layer of GeSi on Si(001) Hrtem Study of Dislocations in GeSi/Si Heterostructures Grown by VPE Kinetics and Transport Model for the Chemical Vapor Epitaxy of Ge_xSi_1-x The Dependence of Ge_xSi_1-xEpitaxial Growth on GeH4 Flow Using Chemical Vapour Deposition Physical Properties and Growth of SiC Study on Photoluminescence Spectra of SiC Raman Study on Residual Strains in Thin 3C-SiC Epitaxial Layers Grown on Si(001) Investigation of{111}A and{111}B Planes of c-GaN Epilayers Grown on GaAs(001)by MOCVD Microtwins and Twin Inclusions in the 3C-SiC Epilayers grown on Si(001)by APCVD Determination of Structure and Polarity of SiC Single Crystal by X-Ray Diffraction Technique Is Thin-Film Solar Cell Technology Promising? Optical and Electrical Properties of GaN:Mg Grown by MOCVD Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics Abatement of Waste Gases and Water During the Processes of Semiconductor Fabrication Control of Arsenic Pollution from Waste Gases During Fabrication of Semiconductor О летучести окиси бора в гелии и водороде при наличии водяного пара О растворимости кислорода в жидком кремнии 直拉硅单晶碳沾污的研究 LPE Ga_1-xAl_xAs/GaAs界面缺陷观察 Si-C相图的研究及碳对硅单晶质量的影响 掺氮区熔硅单晶深能级的研究 Ge在GaAs液相外延中的行为 杂质在硅和砷化镓中行为 两性杂质锗在LPE GaAs中分凝系数和占位比的计算 半导体(目录) 水平式矩形硅外延系统的计算机模拟 低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析 GaAs/Si外延层X射线双晶衍射摇摆曲线的动力学模拟和位错密度的测量 SIPOS膜的结构组成 半导体材料与器件生产工艺尾气中砷、磷、硫的治理及检测 GeSi CVD系统的流体力学和表面反应动力学模型 MOVPE生长Ca(CH_3)_3—AsH_3—H_2体系中砷的形态转化及砷的治理 用固相外延方法制备Si_1-x-yGe_xC_y三元材料 兴建年产一千吨电子级多晶硅工厂的思考 电子级多晶硅的生产工艺 中国信息产业领域相关重点基础材料科技发展战略研究 中国硅材料工业的前景与挑战 半导体硅片生产形势的分析 光伏产业面临多晶硅瓶颈及对策 “十五”期间中国半导体硅材料发展战略思路和建议 薄膜光伏电池中的材料问题 降低超大规模集成电路用高纯水中总有机碳的能量传递光化学模型 附录 附录一 梁骏吾活动年表 附录二 梁骏吾获奖情况 附录三 所获得的专利目录 附录四 学术报告目录 附录五 工程院院士建议 后记
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