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图书分类 > 物理 > 光学 > Ⅲ族氮化物发光二极管：从紫外到绿光（英文版）
本书面向世界科技前沿和国家重大需求，针对高效率Ⅲ族氮化物LED芯片设计和制造的关键问题，基于作者在III族氮化物LED外延生长和芯片制造领域十余年的研究基础和产业化经验，融入国内外同行在这一领域的研究成果，从蓝光/绿光/紫外LED外延结构设计与材料生长、水平结构/倒装结构/垂直结构/高压LED芯片设计与制造工艺、LED失效机理与可靠性这三个方面系统阐述Ⅲ族氮化物LED芯片设计和制造技术。
本书共六章，第一章对Ⅲ族氮化物LED的发展历程、工作原理和物性参数进行了全面的介绍；第二章详细阐述了蓝光/绿光/紫外LED外延生长工艺；第三章介绍高效率水平结构LED芯片制造工艺；第四章介绍倒装结构LED芯片制造技术，对高反射率、低阻欧姆接触p型电极和通孔接触n型电极进行了详细的阐述；第五章介绍高压LED芯片、垂直结构LED芯片和Mini/Micro-LED芯片制造工艺；第六章介绍LED芯片失效机理和LED光学、电学、色度学参数在线测试方法。
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目录
- Contents
1 Physics of ni-Nitnde Light-Emitting Diodes 1
1.1 History of III-Nitride LEDs 1
1.2 Mechanisms of Di-Nitride LEDs 2
1.3 Radiative Recombination and Non-radiative Recombination 4
1.4 Internal Quantum Efficiency 5
1.5 Light Extraction Efficiency and External Quantum Efficiency 9
References 10
2 Epitaxial Growth of III-Nitride LEDs 13
2.1 III-Nitride Blue LEDs 13
2.2 III-Nitride Green LEDs 19
2.2.1 InGaN/GaN Superlattice 19
2.2.2 Stacked GaN/AIN Last Quantum Barrier 36
2.3 III-Nitride Ultraviolet LEDs 41
2.3.1 Sputtered AIN Nucleation Layer 41
2.3.2 Effect of PSS onUYLED 57
2.3.3 Patterned Sapphire with Silica Array 61
2.3.4 Isoelectronic Doping 67
2.3.5 InAIGaN/AIGaN Electron Blocking Layer 74
2.3.6 Graded Al-Content AlGaN Insertion Layer 78
Referencces 82
3 High-Efficiency Top-Emitting III-Nitride LEDs 91
3.1 Light Extraction Microstructure 91
3.1.1 PSS and Patterned ITO 91
3.1.2 Double Layer ITO 96
3.1.3 3D Patterned ITO and Wavy Sidewalls 99
3.1.4 Roughened Sidewalls 102
3.1.5 Air Voids Structure 107
3.2 Current Blocking Layer 112
3.2.1 SiO2 Current Blocking Layer 112
3.2.2 Patterned Current Blocking Layer 117
3.2.3 Reflective Current Blocking Layer 122
3.3 Back Reflector 125
3.4 Low Optical Loss Electrode Structure 135
3.5 Ni/Au Wire Grid Transparent Conductive Electrodes 142
Referencces 147
4.1 Via-Hole-Based Two-Level Metallization Electrodes 151
4.2 Dielectric DBR 158
4.3 Comparison of Flip-Chip LEDs and Top-Emitting LEDs 161
4.4 Ag/TiW, Ni/Ag and ITO/DBR Ohmic Contacts 164
4.5 High-Power Flip-Chip LEDs 175
4.6 Double-Layer Electrode and Hybrid Reflector 180
4.7 Mini/Micro-LED 184
4.7.1 Prism-Structured Sidewall of Mini-LED 184
4.7.2 Light Extraction Analysis of Micro-LED 186
Referencces 190
5 High Voltage and Vertical LEDs 193
5.1 Direct Current High Voltage LED 193
5.2 Alternating Current High Voltage LED 199
5.3 Comparison of DC-HV LED and AC-HV LED 201
5.4 Vertical LEDs 203
References 215
6 Device Reliability and Measurement 217
6.1 Influence of Dislocation Density on Device Reliability 217
6.2 Forward Leakage Current 219
6.3 Reverse Leakage Current 222
6.4 Pad Luster Consistency 225
6.5 Transient Measurement of LED Characteristic Parameters References 230
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