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半导体物理电子学(第二版)
  • 书号:9787030209405
    作者:(美)李(Li,S.S.)
  • 外文书名:Semiconductor Physical Electronics
  • 装帧:圆脊精装
    开本:B5
  • 页数:697
    字数:854000
    语种:zh-Hans
  • 出版社:科学出版社
    出版时间:2008-02-01
  • 所属分类:O47 半导体物理学
  • 定价: ¥198.00元
    售价: ¥156.42元
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目录

  • Contents
    Preface iii
    1.Classification of Solids and Crystal Structure
    1.1 Introduction 1
    1.2 The Bravais Lattice 2
    1.3 The Crystal Structure 6
    1.4 Miller Indices and Crystal Planes 9
    1.5 The Reciprocal Lattice and Brillouin Zone 11
    1.6 Types of Crystal Bindings 14
    1.7 Defects in a Crystalline Solid 18
    Problems 23
    Bibliography 24
    2.Lattice Dynamics 26
    2.1 Introduction 26
    2.2 The One-Dimensional Linear Chain 27
    2.3 Dispersion Relation for a Three-Dimensional Lattice 33
    2.4 The Concept of Phonons 36
    2.5 The Density of States and Lattice Spectrum 37
    2.6 Lattice Specific Heat 39
    Problems 42
    References 44
    Bibliography 44
    3.Semiconductor Statistics 45
    3.1 Introduction 45
    3.2 Maxwell-Boltzmann Statistics 46
    3.3 Fermi-Dirac Statistics 50
    3.4 Bose-Einstein Statistics 56
    3.5 Statistics for the Shallow-Impurity States in a Semiconductor 57
    Problems 59
    Bibliography 60
    4.Energy Band Theory 61
    4.1 Introduction 61
    4.2 Basic Quantum Concepts and Wave Mechanics 62
    4.3 The Bloch-Floquet Theorem 66
    4.4 The Kronig-Penney Model 67
    4.5τbe Nearly Free Electron Approximation 74
    4.6 The Tight-Binding Approximation 80
    4.7 Energy Band Structures for Some Semiconductors 86
    4.8 The Effective Mass Concept for Electrons and Holes 93
    4.9 Energy Band Structures and Density of States for Low-Dimensional Systems 96
    Problems 101
    References 103
    Bibliography 103
    5.Equilibrium Properties of Semiconductors 105
    5.1 Introduction 105
    5.2 Densities of Electrons and Holes in a Semiconductor 106
    5.3 Intrinsic Semiconductors 113
    5.4 Extrinsic Semiconductors 116
    5.5 lonization Energies of Shallow- and Deep-Level Impurities 123
    5.6 Hall Effect, Electrical Conductivity, and Ha11 Mobility 125
    5.7 Heavy Doping Effects in a Degenerate Semiconductor 128
    Problems 130
    References 132
    Bibliography 133
    6.Excess Carrier Phenomenon in Semiconductors 134
    6.1 Introduction 134
    6.2 Nonradiative Recombination: The Shockley-Read-Hall Model 135
    6.3 Band-to-Band Radiative Recombination 140
    6.4 Band-to-Band Auger Recombination 142
    6.5 Basic Semiconductor Equations 146
    6.6 The Charge-Neutrality Equation 149
    6.7 The Haynes-Shockley Experiment 151
    6.8 The Photoconductivity Decay Experiment 154
    6.9 Surface States and Surface Recombination Velocity 159
    6.10 Deep-Level Transient Spectroscopy Technique 162
    6.11 Surface Photovoltage Technique 165
    Problems 169
    References 170
    Bibliography 170
    7.Transport Pr.eperties of Semiconductors 171
    7.1 Introduction 171
    7.2 Galvanomagnetic, Thermoelectric, and Thermomagnetic Effects 173
    7.3 Boltzmann Transport Equation 180
    7.4 Derivation of Transport Coefficients for n-type Semiconductors 182
    7.5 Transport Coefficients for the Mixed Conduction Case 195
    7.6 Transport Coefficients for Some Semiconductors 198
    Problems 208
    References 209
    Bibliography 210
    8.Scattering Mechanisms and Carrier Mobilities in Serniconductors 211
    8.1 Introduction 211
    8.2 Differential Scattβring Cross-Section 214
    8.3 lonized Impurity Scattering 217
    8.4 Neutral Impurity Scattering 221
    8.5 Acoustical Phonon Scattering 222
    8.6 Optical Phonon Scattering 228
    8.7 Scattering by Dislocations 230
    8.8 Electron and Hole Mobilities in Serniconductors 231
    8.9 Hot-Electron Effects in a Semiconductor 239
    Problems 243
    References 244
    Bibliography 244
    9.Optical Properties and Photoelectric Effects 246
    9.1 Introduction 246
    9.2 Optical Constants of a Solid 247
    9.3 Free-Carrier Absorption Process 252
    9.4 Fundamental Absorption Process 256
    9.5 The Photoconductivity Effect 264
    9.6 The Photovoltaic (Dember) Effect 275
    9.7 The Photomagnetoelectric Effect 277
    Problems 281
    References 283
    Bibliography 283
    10.Metal-Serniconductor Contacts 284
    10.1 Introduction 284
    10.2 Metal Work Function and Schottky Effect 285
    10.3 Thermionic Emission Theory 288
    10.4 Ideal Schottky Contact 290
    10.5 Current Flow in a Schottky Diode 295
    10.6 Cm:rent-Voltage Characteristics of a Si1icon and a GaAs Schottky Diode 300
    10.7 Determination of Schottky Barrier Height 305
    10.8 Enhancement of Effective Barrier Height 311
    10.9 Applications of Schottky Diodes 319
    10.10 Ohmic Contacts in Semiconductors 324
    Problems 330
    References 332
    Bibliography 333
    11.p-n Junction Diodes 334
    11.1 Introduction 334
    11.2 Equilibrium Properties of a p-n Junction Diode 335
    11.3 p-n Junction Diode Under Bias Conditions 341
    11.4 Minority Carrier Distribution and Current F1ow 344
    11.5 Diffusion Capacitance and Conductance 351
    11.6 Minority Carrier Storage and Transient Behavior 354
    11.7 Zener and Avalanche Breakdowns 357
    11.8 Tunnel Diodes 363
    11.9 p-n Heterojunction Diodes 366
    11.10 Junction Field-Effect Transistors 371
    Problems 377
    References 380
    Bibliography 380
    12.Solar Cel1s and Photodetectors 381
    12.1 Introduction 381
    12.2 Photovoltaic Devices (Solar Cel1s) 383
    12.3 Photodetectors 417
    Problems 454
    References 456
    Bibliography 457
    13.Light-Emitting Devices 458
    13.1 Introduction 458
    13.2 Device Physics, Structures, and Characteristics of LEDs 459
    13.3 LED Materia1s and Technologies 472
    13.4 Principles of Semiconductor LDs 488
    13.5 Laser Diode (LD) Materials and Technologies 493
    Problems 509
    References 511
    Bibliography 512
    Contents xi
    14.Bipolar Junction Transistors 513
    14.1 Introduction 513
    14.2 Basic Device Structures and Modes of Operation 514
    14.3 Current-Voltage Characteristics 516
    14.4 Current Gain, Base Transport Factor, and Emitter Injection Efficiency 524
    14.5 Modeling of a Bipolar Junction Transistor 528
    14.6 Switching and Frequency Response 534
    14.7 Advanced Bipolar Junction Transistors 541
    14.8 Thyristors 542
    14.9 Heterojunction Bipolar Transistors 548
    Problems 562
    References 565
    Bibliography 565
    15.Metal-0xide-Semiconductor Field-Effect Transistors 567
    15.1 Introduction 567
    15.2 An Ideal Metal-0xide-Semiconductor System 568
    15.3 Oxide Charges and Interface Traps 576
    15.4 MOS Field-Effect Transistors 582
    15.5 SOI MOSFETS 596
    15.6 Charge-Coupled Devices 601
    Problems 609
    References 610
    Bibliography 610
    16.High-Speed III -V Semiconductor Devices 613
    16.1 Introduction 613
    16.2 Metal-Semiconductor Field-Effect Transistors 614
    16.3 High Electron Mobility Transistors 630
    16.4 Hot-Electron Transistors 646
    16.5 Resonant Tunneling Devices 650
    16.6 Transferred-Electron Devices 653
    Problems 659
    References 660
    Bibliography 661
    Solutions to Selected Problems 664
    Appendix 687
    Index 689
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