目 录 科学与人生 ■从教50年述怀 3 ■理想是人生的甘露,奋斗是不老的诗情——谈科学与人生 6 ■机遇？使命？创新？人生 32 战 略 研 究 ■信息技术是新的经济发展引擎 73 ■进入“ 硅石时代”——21世纪集成电路产业与微电子科学技术的发展 77 ■集成电路产业及其科学技术的发展面临着新的历史性突破 81 ■十年磨一剑——集成电路产业历史回顾和发展规律探讨 96 ■科技创新与机制创新推动社会跨越式发展 106 ■关键在于营造有利于创新的机制和环境——对《国家中长期科学和技术发展规划纲要》中集成电路专项实施的讨论 109 ■集成电路50年——发明？发展？面临新的突破和我们的历史机遇 112 科学研究方法论及人才培养 ■关于美国加州伯克莱大学学术活动情况和加强学术活动的几点建议131 ■科技创新的社会条件和人才培养 134 ■立足客观需求,着眼科学前沿,努力引领发展,培养高端人才——纪念我校微电子学科建设30年 137 ■教育改革的探索与实践——庆祝北京大学软件与微电子学院成立十周年的讲话 154 ■“心怀芯,天地宽”——在北京大学信息工程学院成立十周年庆典上的讲话 158 前 沿 综 述 ■SOI技术与三维立体集成电路 167 ■展望九十年代世界高科技发展——微电子将是国际科技竞争的关键 199 ■Challenges of Process Technology in 32nm Technology Node 200 ■32nm及其以下技术节点CMOS技术中的新工艺及新结构器件 232 ■The Neoindustrialization and Integrated Circuits Industry in the Mainland of China 247 ■The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption 281 学 术 论 文 一？器件与工艺 ■新型SON器件的自加热效应 313 ■Silicononnothing MOSFETs fabricated with hydrogen and helium coimplantation 321 ■LaAlO3 as tunnel dielectric for lowvoltage and lowpower pchannel flash memory free of drain disturb 330 ■Tradeoff between speed and static power dissipation of ultrathin body SOI MOSFETs 340 ■A comparative study on analog/RF performance of UTB GOI and SOI devices 349 ■The modulation of Schottky barrier height of NiSi/nSi Schottky diodes by silicide as diffusion source technique 363 ■High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator 370 ■Topdown fabrication of vertical silicon nanorings based on Poisson diffraction 378 ■Process optimization of plasma nitridation SiON for 65nm node gate dielectrics 378 ■Schottky barrier impactionization metaloxidesemiconductor device with reduced operating voltage 397 ■A TaOx based Threshold Switching Selector for the RRAM Crossbar Array Memory 404 ■Experimental Study on the Variation of NBTI Degradation in Nanoscaled HighK/Metalgate PFETs 410 ■Design of A 35GHz ultrawideband BiFET mixer using 0.35μm SiGe BiCMOS technology 417 二？电路与系统 ■A Programmable Spread Spectrum Clock Generation ■A LowVoltage Voltage Doubler without Body Effect ■A PhysicsBased EquivalentCircuit Model for OnChip Symmetric Transformers With Accurate Substrate Modeling 438 ■A PVT Tolerant 10 to 500MHz AllDigital PhaseLocked Loop With Coupled TDC and DCO 458 ■Highly PowerEfficient ActiveRC Filters With Wide BandwidthRange Using LowGain PushPull Opamps 472 ■Characteristics of Gas Flow within a Micro Diffuser/Nozzle Pump 500 ■A New Test Data Compression Scheme for Multiscan Designs 508 ■A piezoresistive cantilever for lateral force detection fabricated by a monolithic postCMOS process 522 ■An ESDAware 2.4GHz PA Design for WLAN Application 541
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