序…柯 俊 林兰英传略 《中国女院士——林兰英》目录 中国女院士——林兰英(节选)…郭米克 女院士林兰英的童年…郭米克 中国女院士林兰英传奇之一:为了古老而年轻的祖国…郭米克 中国太空材料之母…郭米克 《中国女院士林兰英》文学传记问世…鲁 人 女科学家的最后冲刺…郭米克 林兰英院士简历 感言录和访问记 林兰英先生和北方微电子研究开发基地…李志坚 生命不息、攀登不止——记我所认识的林兰英院士…王阳元 学习林兰英先生为科学事业不断开拓永不休止的献身精神…吴德馨 良师益友…王占国 学界之尊，青年楷模…李晋闽 林兰英院士对我的教诲…陈诺夫 晶莹的种子——记半导体材料专家林兰英 …理 由 中国第一根单晶硅研制者…晓 非、曾 默 一个科学家的心愿——访问林兰英同志…佳 邻 生命的鼓点永远铿锵有力——物理学家林兰英谈她与文艺…郭艳秋 平等，首先是贡献上的平等——访中国科学院女院士林兰英…将涵箴、傅 红 乡情·国情·科学情——访全国人大代表、中科院院士林兰英…周文辉 林兰英科学论文选 A 单晶篇 A1 Effects of Point Defects on Lattice Parameters of Semiconductors A2 Nondestructive Measurements of Stoichiometry in Undoped Semi Insulating Gallium arsenide by X-ray bond method. A3 Dislocations and Precipitates in Semi-Insulating Gallium Arsenide Revealed by Ultrasonic Abrahams-Buiocchi Etching. A4 Stoichiometric Defects in Semi-Insulating GaAs. A5 The Bole of Hydrogen in Semi-Insulating InP A6 Relationship Between Deep-Level Centers and Stoichiometry in Semi-Insulating Gallium Arsenide A7 LEC 掺In-GaAs单晶中的一种新型缺陷 A8 氢气和氩气中区熔生长的中子嬗变掺杂硅退火行为的研究 B空间篇 B1 GaAs Single Crystal Growth from Melt in Space B2 Spatial Distributions of Impurities and Defects in Te-and Si-doped GaAs Grown in a Reduced Gravity Environment B3 Preparation and Properties of Semi-Insulating GaAs Single Crystal under Microgravity Conditions B4 Preparation of 24mm Diameter GaAs Crystal in Space B5 Properties and Applications of GaAs Single Crystal Grown under Microgravity Conditions B6 GaAs Single Crystal Growth in Space B7 Improvement of Stoichiometry in Semi-Insulating Gallium Arsenide Grown under Microgravity B8 Preliminary Results of GaAs Single Crystal Growth under High Gravity Conditions. B9 Growth of GaAs Single Crystals at High Gravity B10 太空生长掺Te-GaAs单晶的结构缺陷观测 B11 太空生长半绝缘砷化镓单晶及其应用 附录 空间生长半绝缘GaAs单晶的器件研究 C 外延篇 C(1) 气相外延(VPE)、液相外延(LPE)材料 C(2) 离子束外延(IBE)材料 C(3) 金属有机化学气相淀积(MOCVD)材料 C(4) 分子束外延(MBE)材料 C(5) 纳米材料 D 物理篇 D1 On the Correlation Between High-Order Bands and Some Photoluminescence Lines in Neutron-Irradiated FZ Silicon D2 Neutron Irradiation-Infrared Based Measurement Method for Interstitial Oxygen in Heavily Boron-Doped Silicon D3 Determination of Interstitial Oxygen Concentration in Heavily Doped Silicon by Combination of Neutron Irradiation and FTIR D4 Low-Temperature (10K) Infrared Measurement of Interstitial Oxygen in Heavily Antimony-Doped Silicon via Wafer Thinning D5 硅中“氢-缺陷络合物”施主行为的研究 D6 Photoconductivity and Absorption in a-Si:Cl:H Films D7 Dependence of the Gap on Hydrogen Content in a-Si:H D8 Photon Energy Dependence of SW Effect in α-Si:H Films D9 氢对氢化无定形硅能隙的影响 D10 Backgating and Light Sensitivity in GaAs Metal-Semiconductor Field Effect Transistors D11 Sidegating Effect on Schottky Contact in Ion-Implanted GaAs D12 Influence of the Semi-Insulating GaAs Schottky Pad on the Schottky Barrier in the Active Layer D13 Interface Roughness Scattering in GaAs-AlGaAs Modulation-Doped Heterostructures D14 Influence of DX Centers in the Alx Ga1-x As Barrier on the Low-Temperature Density and Mobility of the Two-Dimensional Electron Gas in GaAs/AlGaAs Modulation-Doped Heterostructure D15 Magnetospectroscopy of Bound Phonons in High Purity GaAs D16 Properties of GaAs Single Crystals Grown by Molecular Beam Epitaxy at Low Temperatures D17 高纯外延GaAs中浅施主杂质的光热电离谱研究 后记
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